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Conferences > CLEO_AT > 2015 > ATu1J > ATu1J.6

Temperature-dependent Characterization of G0.94Sn0.06 Light-Emitting Diode Grown on Si via CVD

Seyed Amir Ghetmiri, Wei Du, Yiyin Zhou, Joe Margetis, Thach Pham, Aboozar Mosleh, Benjamin R. Conley, Amjad Nazzal, Greg Sun, Richard Soref, John Tolle, Hameed A. Naseem, Baohua Li, and Shui-Qing Yu

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Abstract

Temperature-dependent electroluminescence from a double heterostructure n-Ge/i-Ge0.94Sn0.06/p-Ge LED was studied. The peak position of EL spectra showed a blue-shift as the temperature decreased. A maximum emission power of 7 mW was obtained under the current density of 800 A/cm2.

© 2015 Optical Society of America

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