Abstract
In-well-pumped blue InGaN/GaN vertical-external-cavity surface-emitting lasers are demonstrated. The laser structures were grown on bulk GaN substrates by using metal-organic vapor phase epitaxy near atmospheric pressure. The active zone consisted of up to 20 InGaN quantum wells distributed in a resonant periodic gain configuration. High-reflectivity dielectric distributed Bragg-reflectors were used as mirrors. Laser emission with a single longitudinal mode at 440 nm was achieved by exclusively pumping the quantum wells with the 384 nm emission line of a dye-/N2-laser.
© 2013 Optical Society of America
PDF Article | Presentation VideoMore Like This
A. Khiar, M. Witzan, A. Hochreiner, M. Eibelhuber, T. Schwarzl, and G. Springholz
CB_10_4 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2013
B. W. Tilma, W. P. Pallmann, C. A. Zaugg, M. Golling, and U. Keller
ATh3A.2 Advanced Solid State Lasers (ASSL) 2013
Antti Härkönen, Sanna Ranta, Tomi Leinonen, Jari Lyytikäinen, and Mircea Guina
CB_4_3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2013