Abstract

High Near-IR response photo-diode (0.1A/W@800nm) and high efficiency a-Si/a-SiGe tandem solar cell (8.38%) were demonstrated using high-density plasma-fabricated a-SiGe:H deposition technology with Si2H6 and GeH4 precursor. The low temperature (140°C) a-SiGe:H films with low defect density (2.3×1016cm−3) are suitable for the applications of flexible solar self-powered multi-functional panel and 3D stacked monolithic devices.

© 2013 Optical Society of America

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