Abstract

Nitride semiconductors offer the potential to realize a compact UV laser source. Three approaches will be described: (1) InGaN VECSEL for frequency doubling, (2) photo-pumped AlGaN lasers (to 237 nm), and (3) AlGaN laser diodes. 150-word Biography: Dr. Noble Johnson is Research Fellow and Manager of the Optoelectronic Materials and Devices Group at the Palo Alto Research Center (a Xerox Company). He received his Ph.D. degree from Princeton University under a National Defense Graduate Fellowship and has been at PARC since 1976. He has conducted experimental research in the general area of electronic materials and devices, has published over 415 research papers in technical journals and conference proceedings, and is a co-inventor on over fifty patents. As Manager of the Optoelectronic Materials and Devices program he has guided the activities of a world-class R&D team that has successfully developed visible and ultraviolet lasers and LEDs and which has made major contributions to the fundamental understanding of the materials and devices. Dr. Johnson is a fellow of the American Physical Society and a fellow of the Institute of Electrical and Electronics Engineers. Article not available.

© 2013 Optical Society of America