High light extraction efficiency (LEE) of 75.86% and 77% for light-emitting diodes (LEDs) grown on free-standing GaN and patterned sapphire substrates, respectively, are demonstrated using novel vertical transparent LED (VT-LED) package. Compared to conventional silver header package with consistent external quantum efficiency (EQE) and LEE, enhancement of ~14% and ~12% for GaN and sapphire chips, respectively, are also demonstrated up to 100 A/cm2 under DC operations without any current crowding issues. Also, using high refractive index materials (n~2.1) between LED and ZnO stand, LEE of 81% and 82% for blue and green GaN chips can be achieved.

© 2012 Optical Society of America

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