Abstract

In recent years, the growing demand for silicon based light sources has boosted the research field of III-V/IV hybrid lasers. Here, the C/L-band light emission (1.53 μm-1.63 μm) of InAs/In0.25Ga0.75As quantum dots (QDs) epitaxially grown on CMOS-compatible Ge and U-shape Si (001) substrates by solid-source molecular beam epitaxy (MBE) are reported.

© 2018 The Author(s)

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