Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

O-band InAs Quantum Dot Light Sources Monolithically Grown on Si

Not Accessible

Your library or personal account may give you access

Abstract

We discuss our recent progress made in the direct growth of 1.3 μm InAs/GaAs quantum dot (QD) light-emitting sources on Si substrates for Si photonics.

© 2018 The Author(s)

PDF Article
More Like This
Monolithic Integration of 1.3 µm III-V Quantum-Dot Lasers on Si for Si Photonics

Mengya Liao, Mingchu Tang, Siming Chen, Alwyn Seeds, and Huiyun Liu
SW4I.1 CLEO: Science and Innovations (CLEO:S&I) 2018

O-band and C/L-band emission of InAs QDs monolithically grown on Ge and U-shape Si (001) platform

Ting Wang, Wen-Qi Wei, Jian-Huan Wang, and Jian-Jun Zhang
SW4I.6 CLEO: Science and Innovations (CLEO:S&I) 2018

III-V Quantum Dot Lasers Epitaxially Grown on Si

Siming Chen, Mingchu Tang, Jiang Wu, Mengya Liao, Alwyn Seeds, and Huiyun Liu
s2756 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2017

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.