High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers

S. A. Srinivasan; S. A. Srinivasan; C. Porret; E. Vissers; P. Geiregat; P. Geiregat; D. Van Thourhout; D. Van Thourhout; R. Loo; M. Pantouvaki; J. Van Campenhout

doi:10.1364/CLEOPR.2018.Th3C.1

CLEO Pacific Rim Conference 2018
OSA Technical Digest (Optica Publishing Group, 2018),
paper Th3C.1
•https://doi.org/10.1364/CLEOPR.2018.Th3C.1

High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers

S. A. Srinivasan, C. Porret, E. Vissers, P. Geiregat, D. Van Thourhout, R. Loo, M. Pantouvaki, and J. Van Campenhout

Conference on Lasers and Electro-Optics/Pacific Rim 2018

Hong Kong China
29 July–3 August 2018
ISBN: 978-1-943580-45-3

From the session
Germinum Modulators and Ge Photonics (Th3C)

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S. A. Srinivasan, C. Porret, E. Vissers, P. Geiregat, D. Van Thourhout, R. Loo, M. Pantouvaki, and J. Van Campenhout, "High-contrast quantum-confined Stark effect in Ge/SiGe quantum well stacks on Si with ultra-thin buffer layers," in CLEO Pacific Rim Conference 2018, OSA Technical Digest (Optica Publishing Group, 2018), paper Th3C.1.

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Abstract

Quantum-confined Stark effect with a record absorption contrast of 2.5 for 1V swing is demonstrated in Ge/GeSi quantum well stacks grown on Si using ultra-thin buffer layers, targeting future integration in a silicon photonics platform.

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