Abstract

InAs quantum dot core electro-optic modulators are fabricated on (100) silicon substrates opening up large-scale III-V photonic integration. Mach-Zehnder modulator with 8 mm long electrode has 2.2V Vπ and less than 3 dB/cm propagation loss.

© 2018 The Author(s)

PDF Article
More Like This
Intensity and Phase Modulators in Epitaxial III-V Layers Directly Grown on Silicon Operating at 1.55 µm

Prashanth Bhasker, Justin Norman, John Bowers, and Nadir Dagli
FTh4A.3 Frontiers in Optics (FiO) 2017

Optimization Design for 1.55 μm InAs/InGaAs quantum dot Square Microcavity Lasers on Silicon with Edge Midpoint Output Waveguide Structures

Yuanqing Yang, Jun Wang, Lina Zhu, Weirong Chen, Guofeng Wu, Yanxing Jia, Haijing Wang, Yongqing Huang, Xiaomin Ren, Shuai Luo, and Haiming Ji
M4A.11 Asia Communications and Photonics Conference (ACPC) 2020

High Performance 1.3µm InAs Quantum Dot Lasers Epitaxially Grown on Silicon

Alan Y. Liu, Chong Zhang, Andrew Snyder, Dimitri Lubychev, Joel M. Fastenau, Amy W.K. Liu, Arthur C. Gossard, and John E. Bowers
W4C.5 Optical Fiber Communication Conference (OFC) 2014

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription