Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Resonant tunneling diode photodetectors for mid-infrared gas-sensing based on GaSb substrate

Not Accessible

Your library or personal account may give you access

Abstract

We fabricated resonant tunneling diode photodetectors with a GalnAsSb absorption layer and a GaAsSb/AlAsSb double barrier. The detector cut-off wavelength is 3.5 μm and reaches a peak sensitivity of 0.85 A/W at 2004 nm.

© 2018 The Author(s)

PDF Article
More Like This
Resonant Tunneling Diodes: Mid-Infrared Sensing at Room Temperature

Florian Rothmayr, Edgar David Guarin Castro, Fabian Hartmann, Georg Knebl, Anne Schade, Sven Höfling, Johannes Koeth, Andreas Pfenning, Lukas Worschech, and Victor Lopez-Richard
AM2M.7 CLEO: Applications and Technology (CLEO:A&T) 2023

Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate

Jian Huang, Daqian Guo, Zhuo Deng, Huiyun Liu, Jiang Wu, and Baile Chen
S4J.6 Asia Communications and Photonics Conference (ACP) 2018

Visible to Mid-Infrared Photodetection in a Resonant Tunneling Device

J. F. Martins-Filho, R. E. de Araujo, A. S. L. Gomes, J. R. Rios Leite, J. M. L. Figueiredo, C. R. Stanley, and C. N. Ironside
PS224 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2001

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.