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Conferences > CLEOPR > 2017 > PSIII > s2356
  • 2017 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2017),
  • paper s2356

Low threshold current of GaInAsP laser grown on directly bonded InP/Si substrate

Hirokazu Sugiyama, Tetsuo Nishiyama, Naoki Kamada, Yuya Onuki, Xu Han, Gandhi Kallarasan Periyanayagam, Masaki Aikawa, Natsuki Hayasaka, Kazuki Uchida, and Kazuhiko Shimomura

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Abstract

Low threshold current 1.5μm GaInAsP laser was obtained grown on directly bonded InP/Si substrate using MOVPE. To decrease the threshold current, the thickness and doping condition of p-InP cladding layer were optimized. In the new structure laser, the threshold current became half compared to the previous structure laser, and obtained almost comparable threshold current with the laser grown on InP substrate.

© 2017 Optical Society of America

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