Abstract
We analyzed the influence of the p-type GaN layer thickness on the 380nm band near-ultraviolet light-emitting diodes. Both electrical and optical characteristics of the LEDs were getting worse p-type GaN layer thickness increases with growth time. We suggest that the possible degradation mechanisms of characteristics are due to the increase of the non-radiative (NR) recombination rate in the active region as a result of thermal damage during p-type GaN layer growth process.
© 2015 IEEE
PDF ArticleMore Like This
Hyo-Shik Choi, Jong-In Shim, and Won-Jin Choi
26P_102 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015
Hyo-Shik Choi and Jong-In Shim
26P_97 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015
Y. S. Wang, N. C. Chen, and J. F. Chen
C338 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2011