Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • 2015 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2015),
  • paper 25J3_6

Controlling optical properties of Ge-on-Si by thermal annealing and etching process

Not Accessible

Your library or personal account may give you access

Abstract

We studied optical properties of thermally annealed Ge-on-Si. From Raman experiments, tensile strain as well as Si-Ge intermixing were investigated. Significant Γ-band transition peak-shift was confirmed by photoluminescence depending on the thermal annealing conditions.

© 2015 IEEE

PDF Article
More Like This
Raman analysis of in-plane biaxial strain for Ge-on-Si lasers

Bugeun Ki, Jiwoong Baek, Chulwon Lee, Yong-Hoon Cho, and Jungwoo Oh
25J3_5 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015

Enhanced photoluminescence from n+-Ge epitaxial layers on Si: effect of growth/annealing temperature

Naoki Higashitarumizu, Kazumi Wada, and Yasuhiko Ishikawa
25J3_4 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015

Kinetics of thermal annealing in strained uitrathin Si/Ge superlattices on vicinal Si(100) studied by Raman scattering

Z Chen, J Zhou, X Xiao, S Au, and MMT Loy
TuL80 International Quantum Electronics Conference (IQEC) 1996

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.