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Conferences > CLEOPR > 2015 > 25J3 > 25J3_4
  • 2015 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2015),
  • paper 25J3_4

Enhanced photoluminescence from n+-Ge epitaxial layers on Si: effect of growth/annealing temperature

Naoki Higashitarumizu, Kazumi Wada, and Yasuhiko Ishikawa

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Abstract

Photoluminescence intensity is studied for n-type Ge layers (~1×1019 cm−3) grown on Si. The growth and post-growth annealing temperatures are important factors to enhance the light emission together with the concentration of n-type doping.

© 2015 IEEE

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