Growth of Light-Emitting Devices based on InGaN Quantum Dots by MOVPE

Lai Wang; Di Yang; Jiadong Yu; Zhibiao Hao; Yi Luo; Changzheng Sun; Yanjun Han; Bing Xiong; Jian Wang; Hongtao Li

2015 Conference on Lasers and Electro-Optics Pacific Rim
(Optica Publishing Group, 2015),
paper 25H1_1

Growth of Light-Emitting Devices based on InGaN Quantum Dots by MOVPE

Lai Wang, Di Yang, Jiadong Yu, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, and Hongtao Li

Conference on Lasers and Electro-Optics/Pacific Rim 2015

Busan Republic of Korea
24–28 August 2015
ISBN: 978-1-4673-7110-0

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Nanostructures (25H1)

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L. Wang, D. Yang, J. Yu, Z. Hao, Y. Luo, C. Sun, Y. Han, B. Xiong, J. Wang, and H. Li, "Growth of Light-Emitting Devices based on InGaN Quantum Dots by MOVPE," in 2015 Conference on Lasers and Electro-Optics Pacific Rim, (Optica Publishing Group, 2015), paper 25H1_1.

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Abstract

In this paper, we reported our recent progresses on growth of InGaN quantum dots and related light-emitting devices by metal organic vapor phase epitaxy.

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