High temperature hydrogen etching properties of (0001) GaN under various hydrogen pressures and temperature was systematically investigated. We found a specific selective etching condition with high-anisotropy which applicable for the fabrication of high-aspect nanostructures.

© 2013 IEICE

PDF Article
More Like This
InP Heterostructure Photonic Crystal Waveguide Fabricated by High-aspect-ratio ICP Etching

Kaiyu Cui, Yongzhuo Li, Xue Feng, Fang Liu, Yidong Huang, and Wei Zhang
TuPI_5 Conference on Lasers and Electro-Optics/Pacific Rim (CLEOPR) 2013

Fabrication of high-aspect-ratio microgrooves with laser-assisted wet etching for micro heat pipe

Kwang H. Oh, M. K. Lee, S. J. Kwon, and S. H. Jeong
JTuD11 Conference on Lasers and Electro-Optics (CLEO) 2006

Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

Ahmed Ben Slimane, Adel Najar, Tien Khee Ng, Damián P. San-Román-Alerigi, Dalaver Anjum, and Boon S. Ooi
ATh3B.3 Asia Communications and Photonics Conference (ACPC) 2013


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription