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  • Proceedings of the International Quantum Electronics Conference and Conference on Lasers and Electro-Optics Pacific Rim 2011
  • (Optica Publishing Group, 2011),
  • paper C860

Post-Contraction of Oxide Aperture of VCSEL and Prediction of Its Effect on Reliability

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Abstract

We report potential degradation of device performances and reliability of oxide-VCSEL which was exposed to KOH solution after oxidation process. In a damaged device, the oxide aperture was contracted resulting in reduced mode diameter and enlarged mode spacing. We also suggest that ideality factor obtained from I-V graph can be used to predict reliability of the affected devices.

© 2011 AOS

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