In this work, the high performance GaN-based light emitting diodes (LEDs) with embedded micro air voids and SiO2 nanomask by metal-organic chemical vapor deposition (MOCVD). Micro-scale air voids and SiO2 nanomask were clearly observed at the interface between GaN nano-rods (NRs) and the overgrown GaN layer by scanning electron microscopy (SEM). It can increase the light extraction efficiency due to additional light scattering. The transmission electron microscopy (TEM) images show the threading dislocations were suppressed by nanoscale epitaxial lateral overgrowth (NELOG). We fabricated high efficiency LEDs with embedded micro-scale air voids and SiO2 nanomask exhibit smaller reverse-bias current and great enhancement of the light output (65% at 20mA) compared with the conventional LEDs.

© 2011 AOS

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