Abstract

In this work, the high performance GaN-based light emitting diodes (LEDs) with embedded micro air voids and SiO2 nanomask by metal-organic chemical vapor deposition (MOCVD). Micro-scale air voids and SiO2 nanomask were clearly observed at the interface between GaN nano-rods (NRs) and the overgrown GaN layer by scanning electron microscopy (SEM). It can increase the light extraction efficiency due to additional light scattering. The transmission electron microscopy (TEM) images show the threading dislocations were suppressed by nanoscale epitaxial lateral overgrowth (NELOG). We fabricated high efficiency LEDs with embedded micro-scale air voids and SiO2 nanomask exhibit smaller reverse-bias current and great enhancement of the light output (65% at 20mA) compared with the conventional LEDs.

© 2011 AOS

PDF Article
More Like This
High Efficiency GaN-based Light Emitting Diodes with Embedded Air Voids/SiO2 Nanomasks

Ching-Hsueh Chiu, Chien-Chung Lin, Hau-Vei Han, Da-Wei Lin, Yan-Hao Chen, Che-Yu Liu, Yu-Pin Lan, Hao-Chung Kuo, Tien-Chang Lu, and Shing-Chung Wang
JTh2A.68 CLEO: Applications and Technology (CLEO_AT) 2012

Highly Efficient InGaN-Based Light Emitting Devices grown on Nanoscale Patterned Substrates by MOCVD

Chien-Chung Lin, Ching-Hsueh Chiu, H. W. Huang, Shih-Pang Chang, Hao-Chung Kuo, and Chun-Yen Chang
83120C Asia Communications and Photonics Conference and Exhibition (ACP) 2011

A Study of Mechanical Lift-Off Technology for High-Efficiency Vertical LEDs Using Micro-Porous GaN Template

Chia-Yu Lee, Da-Wei Lin, Che-Yu Liu, Shih-Chieh Hsu, Hao-Chung Kuo, Shing-Chung Wang, and Chun-Yen Chang
ATh3N.2 CLEO: Applications and Technology (CLEO_AT) 2013

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription