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  • Proceedings of the International Quantum Electronics Conference and Conference on Lasers and Electro-Optics Pacific Rim 2011
  • (Optica Publishing Group, 2011),
  • paper C338

Diffusion-controlled effects of luminescent efficiency in InGaN/GaN light-emitting diodes

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Abstract

Temperature dependence of photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to investigate the recombination process in InGaN/GaN light-emitting diodes (LEDs). The results exhibited that the nonradiative recombination process can be explained by diffusion-controlled kinetic.

© 2011 AOS

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