Strain Contrast of Dilute Semiconductor GaN1-xAsx and Si1-yCy Hetero-Epitaxial Films in Annular Dark Field Images

X. Wu; J.-M. Baribeau; J.A. Gupta

Conference on Lasers and Electro-Optics/Pacific Rim 2009
(Optica Publishing Group, 2009),
paper ThA4_5

Strain Contrast of Dilute Semiconductor GaN_1-xAs_x and Si_1-yC_y Hetero-Epitaxial Films in Annular Dark Field Images

X. Wu, J.-M. Baribeau, and J.A. Gupta

Conference on Lasers and Electro-Optics/Pacific Rim 2009

Shanghai China
30 August–3 September 2009
ISBN: 978-1-4244-3830-3

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Others Optoelectric Material (ThA4)

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X. Wu, J. -. Baribeau, and J. A. Gupta, "Strain Contrast of Dilute Semiconductor GaN1-xAsx and Si1-yCy Hetero-Epitaxial Films in Annular Dark Field Images," in Conference on Lasers and Electro-Optics/Pacific Rim 2009, (Optica Publishing Group, 2009), paper ThA4_5.

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Abstract

The lower average atomic number strained GaN_xAs_1-x(x = 0.029 and 0.045) and Si_1-yC_y (y ≤ 0.015) films were found to be brighter than the higher average atomic number GaAs and Si in annular dark field (ADF) images.

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