1.3-μm Continuous Wave Lasing of InAs Quantum Dots with GaInNAs Covering Layer on GaAs Substrate Grown by Metal-Organic Chemical Vapor Deposition

M. Kushibe; R. Hashimoto; M. Ezaki; N. Managaki; G. Hatakoshi; M. Nishioka; Y. Arakawa

Conference on Lasers and Electro-Optics/Pacific Rim 2007
(Optica Publishing Group, 2007),
paper WP_038

1.3-μm Continuous Wave Lasing of InAs Quantum Dots with GaInNAs Covering Layer on GaAs Substrate Grown by Metal-Organic Chemical Vapor Deposition

M. Kushibe, R. Hashimoto, M. Ezaki, N. Managaki, G. Hatakoshi, M. Nishioka, and Y. Arakawa

Conference on Lasers and Electro-Optics/Pacific Rim 2007

Seoul Republic of Korea
ISBN: 1-4244-1174-2

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M. Kushibe, R. Hashimoto, M. Ezaki, N. Managaki, G. Hatakoshi, M. Nishioka, and Y. Arakawa, "1.3-μm Continuous Wave Lasing of InAs Quantum Dots with GaInNAs Covering Layer on GaAs Substrate Grown by Metal-Organic Chemical Vapor Deposition," in Conference on Lasers and Electro-Optics/Pacific Rim 2007, (Optica Publishing Group, 2007), paper WP_038.

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Abstract

Room-temperature continuous wave lasing in quantum dots covered with GalnNAs on GaAs substrate was attained at 1.31 µm with threshold current density of 0.4 kA/cm² by metal-organic chemical vapor deposition. The range of continuous wave lasing was extended to 1.33 µm with using a thin p-clad layer.

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