Investigation of Contact Properties in Carbon Nanotube Transistors Using Scanning Photocurrent Microscopy

Jaeku Park; Y. H. Ahn; Jiwoong Park

Conference on Lasers and Electro-Optics/Pacific Rim 2007
(Optica Publishing Group, 2007),
paper WP_032

Investigation of Contact Properties in Carbon Nanotube Transistors Using Scanning Photocurrent Microscopy

Jaeku Park, Y. H. Ahn, and Jiwoong Park

Conference on Lasers and Electro-Optics/Pacific Rim 2007

Seoul Republic of Korea
ISBN: 1-4244-1174-2

From the session
Poster Session I (WP)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
J. Park, Y. H. Ahn, and J. Park, "Investigation of Contact Properties in Carbon Nanotube Transistors Using Scanning Photocurrent Microscopy," in Conference on Lasers and Electro-Optics/Pacific Rim 2007, (Optica Publishing Group, 2007), paper WP_032.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Save article

Abstract

Scanning photocurrent measurements are demonstrated in individual carbon nanotube field-effect transistors. Photocurrent images in conjunction with the electrical conductance measurement elucidate the properties of metal-CNT interfaces, especially the electron band alignment at the contact.

PDF Article

More Like This

Scanning Photocurrent Microscopy in Semiconducting Carbon Nanotube Transistors

Yeonghwan Ahn and Jiwoong Park
QTuL3 Quantum Electronics and Laser Science Conference (CLEO:FS) 2007

Scanning Photocurrent Microscopy for Investigation of Photovoltaic Properties of Nanomaterial Film

Cheolmin Park and Won Seok Chang
JM3A.10 Freeform Optics (Freeform) 2013

Scanning Photoconductivity and Photocurrent Imaging in Germanium Nanowires

B. H. Son, Y. H. Ahn, and Jiwoong Park
WP_033 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2007