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Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper ThA1_2

Optical properties of J-shape ridge waveguide with trench structure for superluminescent diode using InAs/InGaAs quantum-dot active layer

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Abstract

J-shape ridge waveguide with trench for superluminescent diode using InAs/InGaAs quantum-dot active layer was designed and fabricated. The following performance was realized under CW operation: above 80 mW output power at 900 mA, and about 45 nm 3-dB spectral bandwidth.

© 2007 IEEE

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