Abstract

Epitaxial CeBiIG and CeYIG films were grown on (100)-oriented Gd<sub>3</sub>Ga<sub>5</sub>O<sub>12</sub> substrates by pulse laser deposition. We achieved strong FR of 0.65 deg/µm and 0.52 deg/µm at 1.55 µm for CeBiIG and CeYIG films, respectively.

© 2012 OSA

PDF Article