Abstract

We have investigated the dispersion relation of a novel semiconductor-gap-dielectric waveguide in terahertz range. It is shown that InSb-SiO<sub>2</sub>-Si structure supports strongly confined guided mode with area of 6.6 × 10<sup>-5</sup> λ<sup>2</sup> at 1 THz.

© 2011 OSA

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