GaAs Deep-Center Stimulated-Emission at 1.5μm

Janet L. Pan

doi:10.1364/CLEO.2010.JWA93

Conference on Lasers and Electro-Optics 2010
OSA Technical Digest (CD) (Optica Publishing Group, 2010),
paper JWA93
•https://doi.org/10.1364/CLEO.2010.JWA93

GaAs Deep-Center Stimulated-Emission at 1.5μm

Janet L. Pan

Conference on Lasers and Electro-Optics 2010

San Jose, California United States
16–21 May 2010
ISBN: 978-1-55752-889-6

From the session
Joint CLEO/QELS Poster Session II (JWA)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
J. L. Pan, "GaAs Deep-Center Stimulated-Emission at 1.5μm," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optica Publishing Group, 2010), paper JWA93.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

Room-temperature stimulated-emission, optical gains larger than known significant losses, and single-pass laser action from GaAs deep-centers are demonstrated at low electrical injection in cw mode at 1.3-1.5μm. Fast hole capture maintains the population inversion.

PDF Article

More Like This

High-efficiency light-emission from novel GaAs deep-centers for high-speed 1.5μm fiber-optics

Janet L. Pan
CE3_1 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2007

The temperature sensitivity of GaAs-based 1.5 μm GaInNAsSb lasers

S. R. Bank, L.L. Goddard, M. A. Wistey, H. B. Yuen, and J. S. Harris
CTuJ5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2004

25 Gbps Direct Modulation in 1.3-μm InAs/GaAs High-Density Quantum Dot Lasers

Yu Tanaka, Mitsuru Ishida, Kan Takada, Tsuyoshi Yamamoto, Hai-zhi Song, Yoshiaki Nakata, Masaomi Yamaguchi, Kenichi Nishi, Mitsuru Sugawara, and Yasuhiko Arakawa
CTuZ1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010

Previous Article Next Article