Wafer-Scale Monolithic Integration of Al&lt;sup&gt;2&lt;/sup&gt;O&lt;sup&gt;3&lt;/sup&gt;:Er&lt;sup&gt;3+&lt;/sup&gt;Amplifiers with Si Waveguides

Laura Agazzi; Jonathan D. Bradley; Gunther Roelkens; Roel Baets; Feridun Ay; Kerstin Worhoff; Markus Pollnau

doi:10.1364/CLEO.2010.JWA92

Conference on Lasers and Electro-Optics 2010

San Jose, California United States
16–21 May 2010
ISBN: 978-1-55752-889-6

From the session
Joint CLEO/QELS Poster Session II (JWA)

Wafer-Scale Monolithic Integration of Al2O3:Er3+Amplifiers with Si Waveguides

Laura Agazzi, Jonathan D. Bradley, Gunther Roelkens, Roel Baets, Feridun Ay, Kerstin Worhoff, and Markus Pollnau

Conference on Lasers and Electro-Optics 2010
OSA Technical Digest (CD) (Optical Society of America, 2010),
paper JWA92
•https://doi.org/10.1364/CLEO.2010.JWA92

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L. Agazzi, J. D. Bradley, G. Roelkens, R. Baets, F. Ay, K. Worhoff, and M. Pollnau, "Wafer-Scale Monolithic Integration of Al2O3:Er3+Amplifiers with Si Waveguides," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optical Society of America, 2010), paper JWA92.

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Optics & Photonics Topics
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The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Integrated optics (130.0130)
- Integrated optics materials (130.3130)
- Lasers and laser optics (140.0140)
- Optical amplifiers (140.4480)

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Abstract

Co-sputtering and structuring active erbium-doped aluminum oxide waveguides directly on top of processed SOI passive waveguides provides coupling losses of 2.5 dB between active and passive waveguides and a signal enhancement of 7.2 dB.

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Conference on Lasers and Electro-Optics 2010

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