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Conferences > CLEO > 2010 > CWN > CWN4

High Power and Widely Tunable External Cavity Diode Laser with a Single-Angled-Facet Laser Chip

Kiyofumi Muro, Yasutaka Shimada, Ken Kitahara, Tomohisa Endo, Yuji Yamagata, Yumi Yamada, and Tsuyoshi Fujimoto

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Abstract

High power external cavity diode lasers were developed in the wavelength region of 1µm by using single-angled facet laser diodes. 330mW output and 130nm tuning were achieved in the conventional Littman-Metcalf configuration.

© 2010 Optical Society of America

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