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1500-nm InP Diode Lasers Optimized for Use at 77K Demonstrate 73% Conversion Efficiency

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Abstract

The power conversion efficiency of cryogenically-cooled InP diode lasers is limited by excess electrical voltage caused by carrier freeze-out. A laser design which specifically mitigates this effect demonstrates peak efficiency of 73% at 77K.

© 2010 Optical Society of America

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