Photoluminescence lifetimes of nearly dislocation free high Al content AlGaN MQW LEDs on bulk AlN are presented as a function of temperature and excitation power for both direct photo-excitation of the wells and barriers.

© 2010 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription