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Deep Ultraviolet LEDs based on AlGaN Alloys by Plasma-assisted Molecular Beam Epitaxy

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Abstract

We report the development of AlGaN-based deep UV LEDs by plasma-assisted molecular beam epitaxy, which at bare-die configuration have an output power of 1.3 mW at 200 mA and external quantum efficiency of 0.16%.

© 2010 Optical Society of America

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