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Growths of Ultra High Density InGaN-Based Quantum Dots on Self-Assembled Diblock Copolymer Nanopatterns

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Abstract

Selective area growths of highly-uniform InGaN quantum dots (QDs) on dielectric nanopatterns defined by self-assembled diblock copolymer were demonstrated with ultra-high QDs density of 8×1010cm-2, which represents the highest QDs density reported for nitride-based QDs.

© 2010 Optical Society of America

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