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Conferences > CLEO > 2010 > CThL > CThL6

Photoluminescence Emission in Deep Ultraviolet Region from GaN/AlN Asymmetric-Coupled Quantum Wells

Guan Sun, Suvranta K. Tripathy, Yujie J. Ding, Guangyu Liu, G. S. Huang, Hongping Zhao, Nelson Tansu, and Jacob B. Khurgin

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Abstract

Deep ultraviolet photoluminescence peaks up to 5.1 eV with dramatically improved intensities are observed in GaN/AlN asymmetric-coupled quantum wells, due to recombination of electrons in AlN coupling barriers with heavy holes in GaN quantum wells.

© 2010 Optical Society of America

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