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Ultra Low Power Electro-optic Modulator on Silicon: Towards Direct Logic Driven Silicon Modulators

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Abstract

We demonstrate ultra-low switching energy (9.4 fJ/bit), ultra-low swing voltage (150 mV peak-peak) electro-optic modulation in a 2.5 μm radius silicon ring modulator. These results can enable direct logic driven silicon modulators.

© 2010 Optical Society of America

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