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Quantum Well Saturable Absorber Mirror with Electrical Control of Modulation Depth

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Abstract

A saturable absorber mirror comprizing InGaAs/GaAs quantum wells incorporated into a p-i-n structure is demonstrated. Its modulation depth can be reduced from 4.25 % to 1.63 % by applying reverse bias voltage in the range 0-1 V.

© 2010 Optical Society of America

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