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Green Light Emitting Diodes with High Internal Quantum Efficiency InGaN/GaN Self-Organized Quantum Dots Grown by RF-Plasma Assisted Molecular Beam Epitaxy

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Abstract

Self-Organized green InGaN/GaN quantum dots with high internal quantum efficiency have been grown by RF-Plasma Assisted Molecular Beam Epitaxy. Green light emitting diodes based on these dots were fabricated and electroluminescence spectra were measured.

© 2010 Optical Society of America

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