Room-temperature operation of InGaAs/GaAs QW nanopillar light emitting diodes grown on a (111) Si substrate by low temperature MOCVD (400°C) and fabricated using conventional lithography and processing techniques are reported for the first time.
© 2010 Optical Society of America
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
Login to access OSA Member Subscription