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Conferences > CLEO > 2010 > CMB > CMB2

Growth Evolution and Time-Resolved Photoluminescence Studies of III-Nitride Light-Emitting Diodes Grown by Abbreviated Growth Mode on Patterned AGOG Substrate

Yik-Khoon Ee, Xiao-Hang Li, J. M. Biser, W. Cao, Helen M. Chan, R. P. Vinci, and Nelson Tansu

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Abstract

Abbreviated growth mode of InGaN-based light-emitting diodes on nano-patterned sapphire leads to reduction in dislocation density and non-radiative recombination rate, and 37% increase in internal quantum efficiency.

© 2010 Optical Society of America

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