Abstract

Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite Difference Time Domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process.

© 2009 Optical Society of America

PDF Article
More Like This
Hole shape effect of photonic crystals on the guided resonance modes in GaN-based ultra-thin film-transferred light-emitting diodes

C. F. Lai, C. H. Chao, H. C. Kuo, P. Yu, and W. Y. Yeh
JTuD30 Conference on Lasers and Electro-Optics (CLEO) 2010

GaN-based film-transferred light-emitting diodes with photonic crystal

Chun-Feng Lai, Jim-Yong Chi, Chia-Hsin Chao, Chia-En Lee, Hao-Chung Kuo, Chen-Yang Huang, Wen-Yung Yeh, and Tien-Chang Lu
CMOO5 Conference on Lasers and Electro-Optics (CLEO) 2009

Light Extraction from Photonic Crystal Ultra-thin GaN Light-Emitting Diodes with ITO Current Spreading Layer

Chia-Hsin Chao, Chun-Feng Lai, Hao-Chung Kuo, and Wen-Yung Yeh
WG3_1 Conference on Lasers and Electro-Optics/Pacific Rim (CLEOPR) 2009

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription