The effects etching depths of nanohole arrays close to or penetrate the quantum well structures are studied. Our results suggest that when the hole depth is close to the quantum well region, the surface states pinning reduces the band bending and leads to a blue shift of the emission spectrum. When the hole penetrates the quantum well region, similar effects are observed but are due to the strain relaxation in the quantum well.

© 2009 Optical Society of America

PDF Article
More Like This
Light Emission Polarization Properties of a-plane InGaN/GaN Quantum Wells Light Emitting Diodes

Hung-Hsun Huang and Yuh-Renn Wu
CMM2 Conference on Lasers and Electro-Optics (CLEO) 2009

Effects of Strain Relaxation on Luminescent Properties of InGaN/GaN Nanorods from 2D to 0D Transition

Chu-Hsiang Teng, Lei Zhang, Tyler Hill, Brandon Demory, Hui Deng, and P. C. Ku
CF2E.1 CLEO: Science and Innovations (CLEO_SI) 2013

Nanorod Light Emitting Diode Arrays with Highly Concentrated Radiation Profile and Strain Relaxed Structure

Liang-Yi Chen, Ying-Yuan Huang, Pei-hsuan Lin, Min-Yung Ke, and Jian Jang Huang
JWA78 Conference on Lasers and Electro-Optics (CLEO) 2009


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription