Abstract

InAs QWs grown with InAs<sup>y</sup>P<sup>1-y</sup>metamorphic buffer layers on InP substrates demonstrate mid-IR emission. A novel Al-free InAsP/InGaAs SCH design provides improved carrier confinement, allowing InAs QW laser emission near λ~2.5μm @77K.

© 2009 The Optical Society

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