Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 2009 > CMV > CMV3
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CMV3
  • •https://doi.org/10.1364/CLEO.2009.CMV3

Tunneling-injection High-power 1060-nm Quantum Dot Laser with Improved Temperature Stability

E.-M. Pavelescu, C. Gilfert, J. P. Reithmaier, A. Martín-Mínguez, and I. Esquivias

Not Accessible

Your library or personal account may give you access

Abstract

High-power 1060 nm quantum dot laser material was developed with tunnel injection quantum well active zones. This new type of laser material showed an improved internal efficiency (94 %) and allowed output power in excess of 4.4 W (limited by the current source) with a high characteristic temperature (197 K) for 100 μm broad area lasers.

© 2009 Optical Society of America

PDF Article
More Like This
Characteristics of High Performance 1.3 μm Tunnel Injection Quantum Dot Lasers

Z. Mi, S. Fathpour, and P. Bhattacharya
CThH7 Conference on Lasers and Electro-Optics (CLEO:S&I) 2005

A Tunnel Injection Quantum Dot Comb Laser With Wideband Emission Spectra and Temperature Stability

Chi-Sen Lee, Wei Guo, Thomas Frost, and Pallab Bhattacharya
CTuZ4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010

Tunnel Injection Quantum Dot Lasers

S. Ghosh, P. Bhattacharya, J. Urayama, Z-K. Wu, T. Norris, and K.K. Kamath
CThO52 Conference on Lasers and Electro-Optics (CLEO:S&I) 2002

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use