InP/AlGaInP 730nm Emission Quantum Dot Lasers

M. S. Al-Ghamdi; P. M. Smowton; S. Shutts; M. Hutchings; P. Blood; A. B. Krysa

doi:10.1364/CLEO.2009.CMV2

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper CMV2
•https://doi.org/10.1364/CLEO.2009.CMV2

InP/AlGaInP 730nm Emission Quantum Dot Lasers

M. S. Al-Ghamdi, P. M. Smowton, S. Shutts, M. Hutchings, P. Blood, and A. B. Krysa

Conference on Lasers and Electro-Optics 2009

Baltimore, Maryland United States
31 May–5 June 2009
ISBN: 978-1-55752-869-8

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Quantum Dot Lasers II (CMV)

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M. S. Al-Ghamdi, P. M. Smowton, S. Shutts, M. Hutchings, P. Blood, and A. B. Krysa, "InP/AlGaInP 730nm Emission Quantum Dot Lasers," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper CMV2.

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Abstract

We describe growth and wafer design improvements to reduce 300K threshold current density to 165Acm⁻² for 2mm long laser with uncoated facets and, using sophisticated optical and electrical characterisation, we demonstrate how this is achieved.

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