The enhanced light extraction and collimated output beam profile from GaN/InGaN vertical-injection light emitting diodes are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively-coupled-plasma reactive-ion-etching.

© 2009 Optical Society of America

PDF Article
More Like This
Efficiency Enhancement of GaN/InGaN Vertical-Injection Light Emitting Diodes Using Distinctive Indium-Tin-Oxide Nanorods

C. S. Yang, Peichen Yu, C. H. Chiu, C. H. Chang, and H. C. Kuo
JWA77 Conference on Lasers and Electro-Optics (CLEO) 2009

High Light-Extraction Efficiency GaN-Based Vertical Injection LEDs with Surface Nipple Array

C. H. Chiu, M. A. Tsai, Peichen Yu, H. C. Kuo, T. C. Lu, and S. C. Wang
WG3_2 Conference on Lasers and Electro-Optics/Pacific Rim (CLEOPR) 2009

Nanorod Light Emitting Diode Arrays with Highly Concentrated Radiation Profile and Strain Relaxed Structure

Liang-Yi Chen, Ying-Yuan Huang, Pei-hsuan Lin, Min-Yung Ke, and Jian Jang Huang
JWA78 Conference on Lasers and Electro-Optics (CLEO) 2009


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription