Abstract

We demonstrated a GaN-based p-i-n photodiode by inserting a thin low-temperature-grown-GaN layer between p-type Al<sup>0.2</sup>Ga<sup>0.8</sup>N window and intrinsic GaN layer. As compared with control device, our demonstrated one can achieve 3 fold bandwidth-efficiency-products improvement.

© 2009 The Optical Society

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