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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper CWO6

Er Doped As2S3 Photoresist for 3-D Direct Laser Fabrication of 3-D Nanostructures

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Abstract

We present a novel high-index-of-refraction (2.45) photoresist material based on erbium doped arsenic trisulfide. It shows room temperature photoluminescence at 1.5 microns wavelength, and can directly be used for direct laser writing.

© 2008 Optical Society of America

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