Bit-Error-Rate Characterization of Silicon Four-Wave-Mixing Wavelength Converters at 10 and 40 Gb/s

Benjamin G. Lee; Aleksandr Biberman; Mark A. Foster; Amy C. Turner; Michal Lipson; Alexander L. Gaeta; Keren Bergman

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Conference on Lasers and Electro-Optics 2008

San Jose, California United States
4–9 May 2008
ISBN: 978-1-55752-859-9

From the session
CLEO Postdeadline Session II (CPDB)

Bit-Error-Rate Characterization of Silicon Four-Wave-Mixing Wavelength Converters at 10 and 40 Gb/s

Benjamin G. Lee, Aleksandr Biberman, Mark A. Foster, Amy C. Turner, Michal Lipson, Alexander L. Gaeta, and Keren Bergman

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest (CD) (Optical Society of America, 2008),
paper CPDB4

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B. G. Lee, A. Biberman, M. A. Foster, A. C. Turner, M. Lipson, A. L. Gaeta, and K. Bergman, "Bit-Error-Rate Characterization of Silicon Four-Wave-Mixing Wavelength Converters at 10 and 40 Gb/s," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optical Society of America, 2008), paper CPDB4.

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Related Topics
Optics & Photonics Topics
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The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
- Bit error rate
- Silicon
Previously assigned OCIS codes
- Integrated optics (130.0130)
- Wavelength conversion devices (130.7405)
- Nonlinear optics (190.0190)
- Nonlinear optics, four-wave mixing (190.4380)

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Abstract

We present the first bit-error-rate characterization of silicon four-wave-mixing wavelength converters. Power penalties below 0.5 dB are demonstrated over a 20-nm EDFA-limited wavelength range at 10 Gb/s, while 40-Gb/s measurements yield a 2.4-dB power penalty.

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Conference on Lasers and Electro-Optics 2008

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