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Conferences > CLEO > 2008 > CMAA > CMAA2
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper CMAA2

Spontaneous Recombination Rate and Luminescence Efficiency of Staggered InGaN Quantum Wells Light Emitting Diodes

Ronald A Arif, Hongping Zhao, Yik-Khoon Ee, S. Tafon Penn, Volkmar Dierolf, and Nelson Tansu

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Abstract

Spontaneous emission characteristics and power-dependent cathodoluminescence (CL) of staggered InGaN quantum wells (QWs) light emitting diodes were analyzed. The measurements indicated ~4-times improvement in integrated CL intensity and ~50% reduction in non-radiative recombination rate.

© 2008 Optical Society of America

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