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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper JTuA93

Carrier Concentration and Junction Temperature Dependencies of Illumination Efficiency of GaN Power Light-Emitting Diodes

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Abstract

Pulsed drive currents have helped us separate the effects that junction temperature and carrier concentration have on current-induced efficiency degradation of GaN Power LEDs. Carrier concentration and junction temperature dependencies of illumination efficiency are presented.

© 2007 Optical Society of America

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