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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper CMF4

The Characteristics of a High-Q GaN Micro-cavity Light Emitting Diodes

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Abstract

We report the characteristics of a GaN high-Q micro-cavity light-emitting diode (MCLED). The GaN MCLED showed a very narrow linewidth of 0.52 nm at 10 mA and a dominant emission peak wavelength at 465.3 nm.

© 2007 Optical Society of America

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